IRVINE, Calif., Sept. 25, 2008 (GLOBE NEWSWIRE) -- Microsemi Corporation (NasdaqGS:MSCC - News), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has announced the release of a breakthrough 500 V P-Channel RF MOSFET.

Designated the ARF301, Microsemi's latest RF MOSFET provides a leap forward in simplification of drive circuitry in high side switching of half- and full-bridge designs by eliminating the need for complicated and costly isolation circuitry associated with N-Channel devices used as the high side switch.

The ARF301 is well suited for a variety of industrial, scientific and medical (ISM) applications including plasma generation for semiconductor, solar cell, LCD panel, and industrial glass manufacturing.

This new device is fully characterized at 27.12MHz and is available in Microsemi's new rugged T11 flangeless RF package that optimizes thermal transfer by minimizing thermal resistance between the die and heat sink.

 KEY FEATURES
 *    300 Watts Output Power
 *    Gain = 15dB for Class E
 *    Up to 45 MHz Operation
 *    500 V BVDSS
 *    Well suited for Class D or E applications
 *    Rugged Low Thermal Resistance Package
 *    Maximized Safe Operating Area (SOA)
 *    Capacitance matched with ARF300 N-Channel

Previously, highly-efficient high-power RF bridge designs were confined to using N-Channel MOSFETs for the high side switch, as the only device able to operate at this power and frequency. Using an N-Channel for the high side switch, however, requires the input drive circuitry to be referenced to the output. Output for these applications can be switching at 27MHz at over 500 V, thus requiring elaborate isolation techniques for the drive circuitry. The complexity of isolation circuitry design at this power and frequency causes most designers to opt for simpler -- but less efficient -- modes for producing RF power.

The ARF301 P-Channel eliminates complex isolation by referencing high side switch drive circuitry to the DC rail.

Thus the ARF301 P-Channel MOSFET enables highly efficient power RF bridge designs that previously were too complex using N-Channels. To further maximize bridge efficiency, the low side switch should be closely matched in performance and input capacitance to the high side switch.

The Microsemi ARF300 N-Channel was designed to be used with the new ARF301 in these applications. The Ciss, Coss, and Crss for the ARF300 and ARF301 are almost identical, making drive to both devices and their outputs well matched. The combination of the ARF300 and ARF301 simplifies high frequency RF designs, enabling higher efficiencies and greater power densities than with other classes of operation in industrial, scientific and medical applications.

Samples are available now. Contact factory for production availability. At quantities of 500 pieces, the unit price for the ARF301 is $80.96, available through the factory and authorized Microsemi-RF distributors.

Datasheets describing the features and benefits of the ARF301 and ARF300 Power RF MOSFETs may be downloaded from Microsemi's website at http://www.microsemi.com.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed-signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves include implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its website at http://www.microsemi.com.

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         Microsemi Corporation
         FINANCIAL CONTACT:
         John Hohener, Vice President and CFO
           (949) 221-7100
         EDITORIAL CONTACT:
         Cliff Silver, Corporate Communications Manager
           (949) 221-7100