| | Call Details | MoSys, Inc. Earnings Conference Call (Q3 2009) Tue,
Oct 27, 2009, 4:30 pm Eastern
| | About MoSys, Inc.
(NasdaqGM:MOSY) |
| | MoSys, Inc. develops, markets, and licenses embedded memory intellectual property (IP) technologies for advanced systems-on-chips (SoCs) used in various home entertainment, mobile consumer, networking, and storage applications. Its patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed, and low cost. MoSys' embedded memory IP has been included in approximately 175 million devices demonstrating silicon-proven manufacturability in a range of processes and applications. Additionally, the company, through the acquisition of Prism Circuits, operates as a supplier of parallel and serial interconnect IP. Prism Circuit's silicon proven portfolio includes DDR3/2 Combo PHYs, as well as SerDes IP that support data rates from SGMII (1.25Gbps) to CEI-11 (11.3Gbps). These also include XAUI (3.125Gbps and 6.25Gbps); USB 3.0 (5Gbps); PCI Express Gen1 (2.5Gbps) and Gen2 (5.0Gbps); SATA I, II, and III; and 10G KR. MoSys, Inc. offers its technology to semiconductor companies, electronic product manufacturers, foundries, intellectual property companies, and design companies through product development, technology licensing, and joint marketing relationships. It has operations in Japan, Taiwan, the United States, rest of Asia, and Europe. The company was founded in 1991 and is headquartered in Sunnyvale, California. |
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